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Title:
Photoluminescence and Raman investigation of stability of InSe and GaSe thin films
Authors:
Del Pozo-Zamudio, O.; Schwarz, S.; Klein, J.; Schofield, R. C.; Chekhovich, E. A.; Ceylan, O.; Margapoti, E.; Dmitriev, A. I.; Lashkarev, G. V.; Borisenko, D. N.; Kolesnikov, N. N.; Finley, J. J.; Tartakovskii, A. I.
Publication:
eprint arXiv:1506.05619
Publication Date:
06/2015
Origin:
ARXIV
Keywords:
Condensed Matter - Mesoscale and Nanoscale Physics
Bibliographic Code:
2015arxiv150605619d

Abstract

Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when they are exposed to air at room temperature. We find that in GaSe films, PL signal decreases on average below 50% over 24 (72) hours of exposure for films with thicknesses 10-25 (48-75) nm. In contrast, weak PL decrease of less than 20% is observed for InSe nm films after exposure of 100 hours. Similar trends are observed in Raman spectroscopy: within a week, the Raman signal decreases by a factor of 10 for a 24 nm thick GaSe, whereas no decrease was found for a 16 nm InSe film. We estimate that when exposed to air, the layers adjacent to the GaSe film surface degrade and become non-luminescent with a rate of 0.14$\pm$0.05 nm/hour. We show that the life-time of the GaSe films can be increased by up to two orders of magnitude (to several months) by encapsulation in dielectric materials such as SiO$_2$ or Si$_x$N$_y$.
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