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Title:
HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition
Authors:
Chen, P. T.; Sun, Y.; Kim, E.; McIntyre, P. C.; Tsai, W.; Garner, M.; Pianetta, P.; Nishi, Y.; Chui, C. O.
Affiliation:
AA(Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA), AB(Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Menlo Park, California 94305, USA), AC(Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA), AD(Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA), AE(Intel Corporation, Santa Clara, California 95052, USA), AF(Intel Corporation, Santa Clara, California 95052, USA), AG(Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Menlo Park, California 94305, USA), AH(Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA), AI(Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA)
Publication:
Journal of Applied Physics, Volume 103, Issue 3, pp. 034106-034106-6 (2008). (JAP Homepage)
Publication Date:
02/2008
Origin:
AIP
PACS Keywords:
Dielectric thin films, Vacuum deposition, Chemical vapor deposition, Insulators, Defects and impurities: doping, implantation, distribution, concentration, etc., Surface states, band structure, electron density of states
Abstract Copyright:
(c) 2008: American Institute of Physics
DOI:
10.1063/1.2838471
Bibliographic Code:
2008JAP...103c4106C

Abstract

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH4)2S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As2O3 formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out diffusion into the hafnia film were observed after a 450 °C postdeposition anneal and may be the origins for the electrically active defects. Transmission electron microscopy cross section images showed thicker HfO2 films for a given precursor exposure on sulfur treated GaAs versus the nontreated sample. In addition, the valence-band and the conduction-band offsets at the HfO2/GaAs interface were deduced to be 3.18 eV and a range of 0.87-1.36 eV, respectively. It appears that HCl+(NH4)2S treatments provide a superior chemical passivation for GaAs and initial surface for atomic layer deposition.
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