Sign on

SAO/NASA ADS Physics Abstract Service

· Find Similar Abstracts (with default settings below)
· Electronic Refereed Journal Article (HTML)
· References in the article
· Citations to the Article (35) (Citation History)
· Refereed Citations to the Article
· Reads History
·
· Translate This Page
Title:
Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition
Authors:
Kim, Hyoungsub; McIntyre, Paul C.; Chui, Chi On; Saraswat, Krishna C.; Cho, Mann-Ho
Affiliation:
AA(Department of Materials Science and Engineering, Stanford University, Stanford, California 94305), AB(Department of Materials Science and Engineering, Stanford University, Stanford, California 94305), AC(Department of Electrical Engineering, Stanford University, Stanford, California 94305), AD(Department of Electrical Engineering, Stanford University, Stanford, California 94305), AE(Nano-surface Group, Korea Research Institute of Standards and Science, Daejon 305-600, Korea)
Publication:
Applied Physics Letters, Volume 85, Issue 14, id. 2902 (2004). (ApPhL Homepage)
Publication Date:
10/2004
Origin:
AIP
PACS Keywords:
Metal-insulator-semiconductor structures, Nucleation and growth: microscopic aspects, Structure and morphology; thickness; crystalline orientation and texture, Surface hardening: nitridation, carburization, carbonitridation, Passivation, Diffusion of impurities, Chemical vapor deposition
Abstract Copyright:
(c) 2004: American Institute of Physics
DOI:
10.1063/1.1797564
Bibliographic Code:
2004ApPhL..85.2902K

Abstract

The microstructural and electrical properties of Ge-based metal-oxide-semiconductor capacitors containing high-k gate dielectric layers were investigated with and without the presence of a GeOxNy interface layer. The effect of this nitrided layer on thermal stability of the metal oxide/Ge structures was probed by medium energy ion energy spectroscopy (MEIS). Atomic-layer deposited HfO2 on a chemical oxide-terminated Ge (100) surface exhibited poor capacitance-voltage behavior; however, direct substrate surface nitridation at 600 °C in NH3 ambient before HfO2 deposition improved the carrier trapping characteristics. Diffusion of metal impurities (including Hf) into the interfacial oxide/Ge-substrate may be an important source of the measured degradation of electrical properties. MEIS results suggested that the GeOxNy interface layer may inhibit Hf diffusion into the underlying semiconductor at the temperatures investigated.
Bibtex entry for this abstract   Preferred format for this abstract (see Preferences)
   

Find Similar Abstracts:

Use: Authors
Title
Keywords (in text query field)
Abstract Text
Return: Query Results Return    items starting with number
Query Form
Database: Astronomy
Physics
arXiv e-prints