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Title:
Transparent Conducting ITO Films Reactively Sputtered on Polyethylene Terephtalate Substrates Without Heat Treatment
Authors:
Kim, Hyun Hoo; Lee, Moo Young; Kim, Kwang Tae; Yoon, Sahng Hyun
Affiliation:
AA(Department of Electronic Engineering, Doowon Technical College, Ansung, 456-890, Korea; ), AB(Department of Electronic Engineering, Doowon Technical College, Ansung, 456-890, Korea), AC(Department of Electronic Engineering, Doowon Technical College, Ansung, 456-890, Korea), AD(Department of Electronic Engineering, Doowon Technical College, Ansung, 456-890, Korea)
Publication:
International Journal of Modern Physics B, Volume 17, Issue 08-09, pp. 1242-1247 (2003). (IJMPB Homepage)
Publication Date:
00/2003
Origin:
WSPC
Abstract Copyright:
(c) 2003: World Scientific Publishing Company
DOI:
10.1142/S0217979203018818
Bibliographic Code:
2003IJMPB..17.1242K

Abstract

Indium tin oxide (ITO) films have been deposited on PET and glass substrates by DC reactive magnetron sputtering without post-deposition thermal treatment. High quality films have been deposited by optimizing the sputtering parameters. The influence of the working gas pressure, DC power, and oxygen partial pressure has been investigated. The lowest resistivity of ITO films deposited on PET substrates was 6×10-4Ωcm. It has been obtained at a working pressure of 3 mTorr and DC power of 30 W. The sheet resistance and optical transmittance of these films were 22 Ω/square and 84%, respectively. The best values of figures of merit for the electrical and optical chardcteristics such as T/Rsh and T10/Rsh are approximately 38.1 and 7.95 (×10-3 Ω-1), respectively.
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