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Title:
Behavior of hydrogen in high dielectric constant oxide gate insulators
Authors:
Peacock, P. W.; Robertson, J.
Affiliation:
AA(Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom), AB(Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom)
Publication:
Applied Physics Letters, Volume 83, Issue 10, id. 2025 (2003). (ApPhL Homepage)
Publication Date:
09/2003
Origin:
AIP
PACS Keywords:
Other nonmetals, Point defects and defect clusters, Permittivity, Elements oxides nitrides borides carbides chalcogenides etc.
Abstract Copyright:
2003: American Institute of Physics
DOI:
10.1063/1.1609245
Bibliographic Code:
2003ApPhL..83.2025P

Abstract

Interstitial hydrogen is calculated to act as a shallow donor in the candidate high dielectric constant (k) gate oxides ZrO2, HfO2, La2O3, Y2O3, TiO2, SrTiO3, and LaAlO3 but is deep in the oxides SiO2, Al2O3, ZrSiO4, HfSiO4, and SrZrO3. This may account for the change of sign of fixed charge in oxides, from negative in Al2O3 to positive in HfO2.
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