| Title: |
| Behavior of hydrogen in high dielectric constant oxide gate insulators |
| Authors: |
| Peacock, P. W.; Robertson, J. |
| Affiliation: |
| AA(Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom), AB(Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom) |
| Publication: |
| Applied Physics Letters, Volume 83, Issue 10, id. 2025 (2003). (ApPhL Homepage) |
| Publication Date: |
| 09/2003 |
| Origin: |
| AIP |
| PACS Keywords: |
| Other nonmetals, Point defects and defect clusters, Permittivity, Elements oxides nitrides borides carbides chalcogenides etc. |
| Abstract Copyright: |
| 2003: American Institute of Physics |
| DOI: |
| 10.1063/1.1609245 |
| Bibliographic Code: |
| 2003ApPhL..83.2025P |