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Title:
Exponential absorption edge and disorder in Column IV amorphous semiconductors
Authors:
Zanatta, A. R.; Mulato, M.; Chambouleyron, I.
Affiliation:
AA(Instituto de Física de Sa~o Carlos, Universidade de Sa~o Paulo-USP P.O. Box 369, CEP 13560-250, Sa~o Carlos, SP, Brazil), AB(Instituto de Física ``Gleb Wataghin,'' Universidade Estadual de Campinas-UNICAMP P.O. Box 6165, CEP 13083-970, Campinas, SP, Brazil), AC(Instituto de Física ``Gleb Wataghin,'' Universidade Estadual de Campinas-UNICAMP P.O. Box 6165, CEP 13083-970, Campinas, SP, Brazil)
Publication:
Journal of Applied Physics, Volume 84, Issue 9, pp. 5184-5190 (1998). (JAP Homepage)
Publication Date:
11/1998
Origin:
AIP
PACS Keywords:
Optical constants, Amorphous semiconductors, metals, and alloys, Amorphous semiconductors, metallic glasses, glasses, Disordered structures; amorphous and glassy solids, Amorphous semiconductors, Surveys and tutorial papers; resource letters, Elemental semiconductors, Semiconductor compounds
Abstract Copyright:
(c) 1998: American Institute of Physics.
DOI:
10.1063/1.368768
Bibliographic Code:
1998JAP....84.5184Z

Abstract

We discuss the likely origin of the exponential absorption tail, or Urbach edge, of fourfold coordinated amorphous (a-)semiconductors. The present analysis is based on a compilation of a considerable amount of experimental data originating from a great variety of samples, alloys, and authors, and obtained with quite different spectroscopic techniques. An attempt is made to correlate the measured Urbach edge with the structural and optical properties of the samples. The present analysis indicates that the Urbach edge may not only reflect the shape of the joint density of states of the valence and conduction band tails, but may also have important contributions from short-range order potential fluctuations produced by charged defects or impurities.
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