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Title:
Electronic stopping of heavy ions in the Kaneko model
Authors:
Mathar, Richard J.; Posselt, Matthias
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., Postfach 510119, 01314 Dresden, Germany
Publication:
Physical Review B (Condensed Matter), Volume 51, Issue 22, June 1, 1995, pp.15798-15807 (PhRvB Homepage)
Publication Date:
06/1995
Origin:
AIP; APS
PACS Keywords:
Doping and impurity implantation in germanium and silicon
Abstract Copyright:
(c) 1995: The American Physical Society
DOI:
10.1103/PhysRevB.51.15798
Bibliographic Code:
1995PhRvB..5115798M

Abstract

The familiar results of effective charge theory of the electronic stopping of heavy ions in solids have hitherto been based on the target model of a homogeneous electron gas. The heavy-ion scaling rule and experimental proton data were used to incorporate the major information on the polarization of real target materials. Introducing Kaneko's generalized target dielectric functions provides a description of the physical processes from a more ab initio point of view. We propose three refinements of his theory to explain heavy ion stopping data: (i) a correction to introduce band gaps in the target susceptibilities, (ii) a model to exclude the target polarization nearby the ion nucleus from the calculations, and (iii) generalized susceptibilities of target p and d shells. A final discussion points out that the mutual screening of free and d electrons in transition-metal targets is most pronounced for light-ion stopping powers, but that a wishful special treatment of electrons in d bands of solid state targets, as opposed to their atomic states, is still missing.
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